2SC4599 Просмотр технического описания (PDF) - TY Semiconductor

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производитель

2SC4599

NPN Triple Diffused Planar Silicon Transistor

TY Semiconductor 

SMD Type

Transistors

Electrical Characteristics Ta = 25

Parameter

Collector cut-off current

Emitter cut-off current

DC current gain

Gain-Bandwidth product

Output Capacitance

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-to-Base Breakdown Voltage

Collector-to-Emitter Sustain Voltage

Turn-ON time

Storage time

Fall time

Symbol

Testconditons

ICBO VCB = 500 V, IE = 0

IEBO

VEB = 5 V, IC = 0

VCE = 5 V, IC = 0.3A

hFE

VCE = 5 V, IC = 1.5A

fT

VCE = 10 V, IC =0.3A

Cob VCB=10V,f=1MHz

VCE (sat) IC = 1.5 A, IB = 0.3 A

VBE (sat) IC =1.5 A, IB = 0.3 A

V (BR) CBO IC = 1 mA, IE = 0

V (BR) CEO IC = 5 mA,RBE=

V(BR)EBO IE=1mA,IC=0

VCEX(SUS) IC=1.5A,IB1=0.6A,L=2mH,IB2=-0.6A

ton

tstg

IC=2A,IB1=0.4A,IB2=-0.8A,RL=100

Ù,VCC=200V

tf

Product specification

2SC4599

Min Typ Max Unit

10 ìA

10 ìA

15

50

8

18

MHz

50

pF

1.0 V

1.5 V

800

V

500

V

7

V

500

V

0.5

3.0 ìs

0.3

Switching Time Test Circuit

hFE Classification

Rank

hFE

L

15 to 30

M

20 to 40

N

30 to 50

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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