2SC4745 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SC4745

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC4745

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 10mA ; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB=B 1A

ICES

Collector Cutoff Current

VCE= 1500V ; RBE= 0

hFE

DC Current Gain

IC= 1A ; VCE= 5V

tf

Fall Time

ICP= 5A , IB1= 1A; fH= 64kHz

MIN TYP. MAX UNIT

800

V

6

V

5.0

V

1.5

V

500 μA

7

30

0.4 μs

isc Website：www.iscsemi.cn

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