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2SC4745 Просмотр технического описания (PDF) - Inchange Semiconductor

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Компоненты Описание
производитель
2SC4745
Iscsemi
Inchange Semiconductor Iscsemi
2SC4745 Datasheet PDF : 3 Pages
1 2 3
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4745
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
APPLICATIONS
·Designed for character display horizontal deflection
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
6
A
IC(peak) Collector Current-Peak
IC(surge) Collector Current-Surge
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
7
A
16
A
50
W
150
-55~150
isc Websitewww.iscsemi.cn

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