2SC4596 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC4596 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4596
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 3A ; IB= 0.3A, L= 1mH
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50μA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.15A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.2A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.15A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 4A; IB=B 0.2A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V
COB
Output Capacitance
Switching times
IE=0; VCB= 10V; ftest= 1.0MHz
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 3A ; IB1= -IB2= 0.15A
RL= 10Ω;VCC≈ 30V
MIN TYP. MAX UNIT
60
V
100
V
5
V
0.3
V
0.5
V
1.2
V
1.5
V
10 μA
10 μA
100
320
120
MHz
80
pF
0.3 μs
1.5 μs
0.3 μs
hFE classifications
E
F
100-200 160-320
isc Website：www.iscsemi.cn
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