2SC4703-T1 Просмотр технического описания (PDF) - Renesas Electronics

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2SC4703-T1

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

Renesas Electronics 

2SC4703

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

DC Characteristics

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

RF Characteristics

Gain Bandwidth Product

Insertion Power Gain (1)

Insertion Power Gain (2)

Noise Figure

Collector Capacitance

2nd Order Intermoduration Distortion

3rd Order Intermoduration Distortion

Symbol

Test Conditions

ICBO VCB = 20 V, IE = 0 mA

IEBO VEB = 2 V, IC = 0 mA

h Note 1

FE

VCE = 5 V, IC = 50 mA

fT

VCE = 5 V, IC = 50 mA

S21e2 VCE = 5 V, IC = 50 mA, f = 1 GHz

S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz

NF VCE = 5 V, IC = 50 mA, f = 1 GHz

C Note 2

ob

VCB = 5 V, IE = 0 mA, f = 1 MHz

IM2 IC = 50 mA,

VO = 105 dBµV/75 Ω,

f = 190 − 90 MHz

VCE = 5 V

VCE = 10 V

IM3 IC = 50 mA,

VO = 105 dBµV/75 Ω,

f = 2 × 190 − 200 MHz

VCE = 5 V

VCE = 10 V

MIN.

–

–

50

–

6.5

–

–

–

–

–

–

TYP.

–

–

–

6.0

8.3

8.5

2.3

1.5

55

63

76

81

MAX.

1.5

1.5

250

–

–

–

3.5

2.5

–

–

–

–

Unit

µA

µA

–

GHz

dB

dB

dB

pF

dBc

dBc

Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

Marking

hFE Value

SH

SH

50 to 100

SF

SF

80 to 160

SE

SE

125 to 250

2

Data Sheet PU10339EJ01V1DS

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