C4690 Просмотр технического описания (PDF) - Toshiba
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C4690 Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC4690
Power Amplifier Applications
2SC4690
Unit: mm
• High breakdown voltage: VCEO = 140 V (min)
• Complementary to 2SA1805
• Suitable for use in 70-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
140
V
Collector-emitter voltage
VCEO
140
V
Emitter-base voltage
VEBO
5
V
DC
Collector current
IC
10
A
Pulse
ICP
20
Base current
IB
1
A
Collector power dissipation
(Tc = 25°C)
PC
80
W
JEDEC
―
JEITA
―
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10
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