2SC4691 Просмотр технического описания (PDF) - Panasonic Corporation
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2SC4691 Datasheet PDF : 3 Pages
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Transistors
2SC4691
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
40
V
Collector-emitter voltage (E-B short) VCES
40
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
100
mA
Peak collector current
ICP
300
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg −55 to +125 °C
0.2+–00..015
3
Unit: mm
0.15+–00..015
1
2
(0.5) (0.5)
1.0±0.1
1.6±0.1
5˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SSMini3-G1 Package
Marking Symbol: 2Y
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0
Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0
Forward current transfer ratio *
hFE VCE = 1 V, IC = 10 mA
60
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
Base-emitter saturation voltage
VBE(sat) IC = 10 mA, IB = 1 mA
Transition frequency
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
0.1
0.1
200
0.17 0.25
1
450
2
6
µA
µA
V
V
MHz
pF
Turn-on time
Turn-off time
Storage time
ton Refer to the measurement circuit
toff
tstg
17
ns
17
ns
10
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
60 to 120
90 to 200
Publication date: January 2003
SJC00166BED
1
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