2SC4512 Просмотр технического описания (PDF) - SavantIC Semiconductor
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2SC4512 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4512
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA; RBE=6
VCE(sat) Collector-emitter saturation voltage IC=2A; IB=0.2A
ICBO
Collector cut-off current
VCB=120V ;IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=2A ; VCE=4V
COB
Collertor output capacitance
f=1MHz; VCB=10V
fT
Transition frequency
IE=-0.5A ; VCE=12V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
VCC=30V; IC=3A
IB1=-IB2=0.3A
RL=10B
hFE Classifications
O
P
Y
50-100 70-140 90-180
MIN TYP. MAX UNIT
80
V
0.5
V
10
µA
10
µA
50
110
pF
20
MHz
0.16
µs
2.60
µs
0.34
µs
2
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