INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4460
DESCRIPTION
·High Breakdown Voltage-
: V(BR)CEO= 500V(Min)
·Fast Switching speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
800
V
VCEO Collector-Emitter Voltage
500
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICP
Collector Current-Pulse
25
A
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
4
A
55
W
3
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc Website:www.iscsemi.cn