C4570 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

C4570

Silicon NPN RF Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN RF Transistor

isc RF Product Specification

2SC4570

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

ICBO

Collector Cutoff Current

VCB= 15V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 1V; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5mA ; IB= 0.5mA

hFE

DC Current Gain

IC= 5mA ; VCE= 5V

fT

Current-Gain—Bandwidth Product IC= 5mA ; VCE= 5V

COB

Output Capacitance

︱S21e︱2 Insertion Power Gain

IE= 0 ; VCB= 3V;f= 1.0MHz

IC= 5mA ; VCE= 5V;f= 1.0GHz

MIN TYP. MAX UNIT

0.1 μA

0.1 μA

0.5

V

40

200

5.5

GHz

0.7 0.9 pF

5.0

dB

‹ hFE Classification

Rank

T72

T73

T74

Marking T72

T73

T74

hFE

40-80 60-120 100-200

isc Website：www.iscsemi.cn

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