2SC4512 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC4512 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4512
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=25mA; RBE=∞
80
V
VCE(sat) Collector-emitter saturation voltage IC=5A; IB=0.2A
0.5
V
ICBO
Collector cut-off current
VCB=120V ;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
10
μA
hFE
DC current gain
IC=2A ; VCE=4V
50
COB
Collertor output capacitance
f=1MHz; VCB=10V
110
pF
fT
Transition frequency
IE=-0.5A ; VCE=12V
20
MHz
Switching times
固IN电C半H导AN体GE SEMICONDUTOR ton
Turn-on time
tstg
Storage time
tf
Fall time
VCC=30V; IC=3A
IB1=-IB2=0.3A
RL=10Ω
0.16
2.60
0.34
hFE Classifications
μs
μs
μs
O
P
Y
50-100 70-140 90-180
2
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