C4508 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

C4508

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustainig voltage

IC=100mA ; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A

VBEsat Base-emitter saturation voltage

IC=4A ;IB=0.8A

ICBO

Collector cut-off current

VCB=450V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=4A ; VCE=5V

Product Specification

2SC4508

MIN TYP. MAX UNIT

400

V

500

V

7

V

0.8

V

1.2

V

100 μA

100 μA

25

65

20

2

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