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2SC4500 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталоге
Компоненты Описание
производитель
2SC4500
Renesas
Renesas Electronics Renesas
2SC4500 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SC4500(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC (peak)
PC
PC * 1
Tj
Tstg
Ratings
Unit
60
V
60
V
7
V
1
A
2
A
0.8
W
8
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V(BR)CEO 60
voltage
Emitter to base breakdown
V(BR)EBO
7
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I CBO
hFE
VCE (sat)
2000 —
Base to emitter saturation
VBE (sat)
voltage
Turn on time
Turn off time
Note: 1. Pulse Test.
t on
100
t off
600
Max Unit
V
V
10
µA
1.5 V
2.0 V
ns
ns
Test Conditions
IC = 1 mA, RBE =
IE = 0.1 mA, IC = 0
VCB = 60 V, IE = 0
VCE = 10 V, IC = 500 mA*1
IC = 500 mA, IB = 0.5 mA*1
IC = 500 mA, IB = 0.5 mA*1
VCC = 12 V, IC = 250 mA,
IB1 = –IB2 = 5 mA

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