2SC4417 Просмотр технического описания (PDF) - Panasonic Corporation
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2SC4417 Datasheet PDF : 3 Pages
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Transistors
2SC4417
Silicon NPN epitaxial planar type
For intermediate frequency amplification of TV image
■ Features
• High transition frequency fT
• Satisfactory linearity of forward current transfer ratio hFE
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
45
V
Collector-emitter voltage (Base open) VCEO
35
V
Emitter-base voltage (Collector open) VEBO
4
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
Marking Symbol: 2Z
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
45
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
35
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
4
Collector-emitter cutoff current (Base open) ICEO VCE = 20 V, IB = 0
Forward current transfer ratio
hFE VCE = 10 V, IC = 10 mA
20
Collector-emitter saturation voltage
VCE(sat) IC = 20 mA, IB = 2 mA
Transition frequency *
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz
Common-emitter reverse transfer
capacitance
Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz
10
100
0.5
500
1.5
V
V
V
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: January 2003
SJC00156CED
1
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