2SC4177 Просмотр технического описания (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.
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2SC4177 Datasheet PDF : 1 Pages
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2 SC4177
TRANSISTOR (NPN)
FEATURES
High DC Current Gain
Complementary to 2SA1611
High Voltage
APPLICATIONS
General Purpose Amplification
SOT–323
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
50
VEBO Emitter-Base Voltage
5
IC
Collector Current
100
PC
Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE*
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Base-emitter voltage
VBE
Transition frequency
fT
Collector output capacitance
Cob
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
Test conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
VCE=6V, IC=1mA
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=1mA
VCE=6V, IC=10mA
VCB=6V, IE=0, f=1MHz
Min
Typ
60
50
5
90
0.55
250
3
Max
100
100
600
0.3
1
0.65
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
L4
90–180
L4
L5
135–270
L5
L6
200–400
L6
L7
300–600
L7
１
JinYu
semiconductor
www.htsemi.com
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