2SC4138 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SC4138

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC4138

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0

400

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 1.2A

VBE(sat) Base-Emitter Saturation Voltage

IC= 6A; IB=B 1.2A

ICBO

Collector Cutoff Current

VCB= 500V ; IE= 0

0.5

V

1.3

V

0.1 mA

IEBO

Emitter Cutoff Current

VEB= 10V; IC= 0

0.1 mA

www.iscsemi.cn hFE

DC Current Gain

IC= 6A ; VCE= 4V

10

COB

Output Capacitance

IE= 0 ; VCB= 10V; ftest=1.0MHz

fT

Current-Gain—Bandwidth Product

IE= -0.7A ; VCE= 12V

Switching Times

85

10

ton

Turn-on Time

tstg

Storage Time

IC= 6A,IB1= 0.6A; IB2= -1.2A

RL= 33.3Ω; VCC= 200V

tf

Fall Time

30

pF

MHz

1.0 μs

3.0 μs

0.5 μs

isc Website：www.iscsemi.cn

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