2SC4111 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC4111 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4111
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Eemitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=7A ;IB=2.5A
VBEsat Base-emitter saturation voltage
IC=7A ;IB=2.5A
ICBO
Collector cut-off current
VCB=750V; IE=0
VCB=1500V; IE=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=10V;f=0.5MHz
Switching times
ts
Storage time
tf
Fall time
IC=6A ;IB1=-IB2=1.7A
LLeak=5μH
MIN TYP. MAX UNIT
7
V
5.0
V
1.5
V
10
μA
1
mA
5
3
8
2
MHz
12
μs
0.6
μs
2
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