C4155 Просмотр технического описания (PDF) - Isahaya Electronics
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C4155 Datasheet PDF : 2 Pages
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DESCRIPTION
2SC4155 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=0.3V max
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
〈SMALL-SIGNAL TRANSISTOR〉
2SC4155
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
2.1
0.425 1.25
0.425
Unit：ｍｍ
①
②
③
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
VCBO Collector to Base voltage
50
V
VCEO Collector to Emitter voltage
50
V
VEBO
Emitter to Base voltage
6
V
IC
Collector current
100
mA
PC
Collector dissipation
200
mW
Tj
Junction temperature
＋150
℃
Tstg
Storage temperature
-55～＋150 ℃
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
JEITA：SC-70
JEDEC： -
MARKING
HR
Type name
hFE Item
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
I C=100μA ,R BE=∞
V CB=50V, I E=0mA
V EB=4V, I C=0mA
V CE=6V, I C=1mA
V CE=6V, I C=0.1mA
I C=30mA ,IB=1.5mA
V CE=6V, I E=-10mA
V CB=6V, I E=0mA,f=1MHz
※： It shows hFE classification at right table
Item
hFE
Limits
Unit
Min Typ Max
50
-
-
V
-
-
0.5 μA
-
-
0.5 μA
120
-
560
70
-
-
-
-
0.3
V
-
200
-
MHz
-
2.0
-
pF
Q
120～270
R
180～390
S
270～560
ISAHAYA ELECTRONICS CORPORATION
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