2SC3892 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC3892 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3892
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-base breakdown voltage
IE=200mA , IC=0
5
V
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.2A
5.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
IC=5A ;IB=1.2A
VCB=500V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
1.5
V
10 μA
66
200 mA
8
12
fT
Transition frequency
IC=0.1A ; VCE=10V
1
3
MHz
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
210
pF
VF
Diode forward voltage
ts
Storage time
tf
Fall time
IF=5A
Resistive load
ICP=5A ;IB1=1A;IB2=-2A;RL=40Ω
2.0
V
2.5 μs
0.2 μs
2
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