2SC3850 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC3850 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3850
DESCRIPTION
·With TO-3PN package
·Good linearity of hFE
·Low collector saturation voltage
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
固IN电C半H导AN体GE SEMICONDUCTOR SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
UNIT
V
V
V
IC
Collector current
20
A
ICM
Collector current-peak
30
A
IB
Base current
6
A
PC
Collector power dissipation
Ta=25℃
TC=25℃
2.5
W
125
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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