2SC3974 Просмотр технического описания (PDF) - Panasonic Corporation
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2SC3974 Datasheet PDF : 4 Pages
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Power Transistors
2SC3974
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
■ Features
• High-speed switching
• High collector-base voltage (Emitter open) VCBO
• Wide safe operation area
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
800
V
Collector-emitter voltage (E-B short) VCES
800
V
Collector-emitter voltage (Base open) VCEO
500
V
Emitter-base voltage (Collector open) VEBO
8
V
Base current
IB
4
A
Collector current
IC
7
A
Peak collector current
ICP
15
A
Collector power dissipation
PC
80
W
Ta = 25°C
3.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 800 V, IE = 0
VEB = 5 V, IC = 0
VCE = 5 V, IC = 0.1 A
VCE = 5 V, IC = 4 A
IC = 4 A, IB = 0.8 A
IC = 4 A, IB = 0.8 A
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 4 A
IB1 = 0.8 A, IB2 = −1.6 A
VCC = 200 V
500
V
100 µA
100 µA
15
8
1.0
V
1.5
V
20
MHz
1.0
µs
3.0
µs
0.3
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJD00118BED
1
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