2SC3937 Просмотр технического описания (PDF) - Panasonic Corporation
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2SC3937 Datasheet PDF : 3 Pages
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Transistors
2SC3937
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
• Low noise figure NF
• High forward transfer gain S21e2
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
15
V
Collector-emitter voltage (Base open) VCEO
10
V
Emitter-base voltage (Collector open) VEBO
2
V
Collector current
IC
80
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 2W
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0
Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0
Forward current transfer ratio
hFE1 VCE = 8 V, IC = 20 mA
hFE2 VCE = 1 V, IC = 3 mA
Transition frequency
fT
VCE = 8 V, IC = 20 mA, f = 0.8 GHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
1
µA
1
µA
50
300
80
280
6
GHz
0.7 1.2
pF
Forward transfer gain
Maximum unilateral power gain
Noise figure
S21e2
GUM
NF
VCE = 8 V, IC = 20 mA, f = 0.8 GHz
VCE = 8 V, IC = 20 mA, f = 0.8 GHz
VCE = 8 V, IC = 7 mA, f = 0.8 GHz
13
dB
14
dB
1.0 1.7
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJC00147BED
1
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