2SC3932(2001) Просмотр технического описания (PDF) - Panasonic Corporation
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2SC3932 Datasheet PDF : 4 Pages
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Transistor
2SC3932
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
s Features
q High transition frequency fT.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage VCEO
20
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation PC
150
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
0.3+Ð00..01
3
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10û
Unit: mm
0.15+Ð00..0150
1:Base
2:Emitter
3:Collector
Marking symbol : R
EIAJ:SC–70
SMini3-G1 Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
Collector to base voltage
VCBO
IC = 100µA, IE = 0
30
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
3
Forward current transfer ratio
hFE
Transition frequency
fT*
VCB = 10V, IE = –2mA
25
VCB = 10V, IE = –15mA, f = 200MHz
800
Base to emitter voltage
VBE
VCB = 10V, IE = –2mA
Common emitter reverse transfer capacitance Cre
VCE = 10V, IC = 1mA, f = 10.7MHz
Common base reverse transfer capacitance Crb
VCE = 6V, IC = 0, f = 1MHz
Power gain
PG
VCB = 10V, IE = –1mA, f = 200MHz
typ max Unit
V
V
250
1600 MHz
0.72
V
1
1.5
pF
0.8
pF
20
dB
*hFE Rank classification
Rank
T
S
fT(MHz)
Marking Symbol
800 ~ 1400 1000 ~ 1600
RT
RS
425
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