JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A
VBEsat Base-emitter saturation voltage
IC=6A ;IB=1.2A
ICBO
Collector cut-off current
VCB=450V; IE=0
IEBO
Emitter cut-off current
VEB=10V; IC=0
hFE
DC current gain
IC=6A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=6A; IB1=2A
IB2=-4A; RL=15Ω
Product Specification
2SC3725
MIN TYP. MAX UNIT
400
V
450
V
10
V
0.8
V
1.2
V
100 μA
100 μA
10
1.0
μs
2.5
μs
0.5
μs
2