2SC3752 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SC3752

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3752

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=:

800

V

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

1100

V

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

7

V

VCEsat

VBEsat

ICBO

IEBO

Collector-emitter saturation voltage IC=1.5A; IB=0.3A

Base-emitter saturation voltage

IC=1.5A ;IB=0.3A

Collector cut-off current

VCB=800V; IE=0

Emitter cut-off current

VEB=5V; IC=0

2.0

V

1.5

V

10

µA

10

µA

hFE-1

DC current gain

IC=0.2A ; VCE=5V

10

40

hFE-2

DC current gain

fT

Transition frequency

COB

Collector output capacitance

Switching times

IC=1A ; VCE=5V

IC=0.2A ; VCE=10V

f=1MHz;VCB=10V

8

15

60

MHz

pF

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=2.0A; IB1=0.4A;IB2=-0.8A

VCC=400V ,RL=200C

0.5

µs

3.0

µs

0.3

µs

hFE-1 Classifications

K

L

10-20

15-30

M

20-40

2

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