2SC3797 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге

Компоненты Описание

производитель

2SC3797

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3797

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; L= 25mH

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB=B 1A

ICBO

Collector Cutoff Current

VCB= 800V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 0.1A; VCE= 5V

hFE-2

DC Current Gain

IC= 5A; VCE= 5V

fT

Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; f= 1MHz

Switching Times

ton

Turn-on Time

ts

Storage Time

tf

Fall Time

IC= 5A; IB1= -IB2= 1A;

VCC= 200V

MIN TYP. MAX UNIT

500

V

1.0

V

1.5

V

100 μA

100 μA

15

8

8

MHz

1.0 μs

3.0 μs

1.0 μs

isc Website：www.iscsemi.cn

Share Link: