2SC3797 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC3797 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3797
DESCRIPTION
·
·Collector-Base Breakdown Voltage-
: V(BR)CBO= 800V(Min.)
·Low Collector Saturation Voltage
·High Speed Switching
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCES
Collector-Emitter Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
15
A
IBB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
4
A
2.5
W
100
150
℃
-55~150 ℃
isc Website：www.iscsemi.cn
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