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2SC3638 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге
Компоненты Описание
производитель
2SC3638
Iscsemi
Inchange Semiconductor Iscsemi
2SC3638 Datasheet PDF : 4 Pages
1 2 3 4
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3638
DESCRIPTION
·With TO-3PN package
·High voltage ,high speed
·High reliability
APPLICATIONS
·Ultrahigh-definition CRT display horizontal
deflection output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
TC=25
Tj
Junction temperature
Tstg
Storage temperature
VALUE
900
500
7
15
25
100
150
-55~150
UNIT
V
V
V
A
A
W

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