2SC3519A Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SC3519A

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

2SC3519/A

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

V(BR)CEO= 160V(Min)-2SC3519

= 180V(Min)-2SC3519A

·Good Linearity of hFE

·Complement to Type 2SA1386/A

APPLICATIONS

·Designed for audio and general purpose applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

VCBO

VCEO

www.iscsemi.cn PARAMETER

VALUE UNIT

2SC3519

160

Collector-Base

Voltage

V

2SC3519A

180

2SC3519

160

Collector-Emitter

Voltage

V

2SC3519A

180

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

IBB

Base Current-Continuous

Collector Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

4

A

130

W

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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