2SC3647L-AB3-R Просмотр технического описания (PDF) - Unisonic Technologies
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2SC3647L-AB3-R Datasheet PDF : 4 Pages
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2SC3647
■ TYPICAL CHARACTERICS
2.0
1.6
1.2
0.8
0.4
0
0
IC - VCE
50mA
40mA
30mA
20mA
10mA
5mA
3mA
2mA
1mA
IB = 0
1
2
3
4
5
Collector to Emitter Voltage, VCE (V)
IC - VBE
2.4
VCE = 5V
2.0
1.6
1.2
0.8
0.4
0
0
0.2 0.4
0.6 0.8 1.0 1.2
Base to Emitter Voltage, VBE (V)
100
7
5
cob - VCB
F = 1MHz
3
2
10
7
5
3
7 1.0 2 3 5 7 10 2 3 5 7 100 2
Collector to Base Voltage, VCB (V)
NPN EPITAXIAL SILICON TRANSISTOR
1.0
0.8
0.6
0.4
0.2
0
0
IC - VCE
4.5mA4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
IB = 0
10
20
30
40
50
Collector to Emitter Voltage, VCE (V)
1000
7
5
hFE - IC
VCE = 5V
3
Ta = 75℃
2
25℃
-25℃
100
7
5
3
70.01
2 3 5 7 0.1 2 3 5 7 1.0
Collector Current, IC (A)
23
1000
7
5
3
2
VCE (sat) - IC
IC/IB = 10
100
7
5
Ta = 75℃ 25℃
3
2
-25℃
10
7 0.01 2 3 5 7 0.1 2 3 5 7 1.0
Collector Current, IC (A)
23
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R208-039,A
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