C3805 Просмотр технического описания (PDF) - Toshiba

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Компоненты Описание

производитель

C3805

Silicon NPN Epitaxial Type (PCT process) Transistor

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

IEBO

hFE (1)

hFE (2)

VCE (sat)

VBE (sat)

fT

Cob

Test Condition

VCB = 240 V, IE = 0

VEB = 7 V, IC = 0

VCE = 10 V, IC = 0.5 mA

VCE = 10 V, IC = 20 mA

IC = 10 mA, IB = 1 mA

IC = 10 mA, IB = 1 mA

VCE = 10 V, IC = 20 mA

VCB = 20 V, IE = 0, f = 1 MHz

Marking

2SC3805

Min Typ. Max Unit

―

―

1.0

µA

―

―

1.0 mA

20

―

―

30

―

200

―

―

1.0

V

―

―

1.0

V

40

70

― MHz

―

3.0

―

pF

C3805

Product No.

Lot No.

Explanation of Lot No.

Month of manufacture: January to December are denoted by letters A to L respectively.

Year of manufacture: last decimal digit of the year of manufacture

2

2002-07-23

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