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2SC3673 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SC3673
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
2SC3673 Datasheet PDF : 5 Pages
1
2
3
4
5
I
C
– V
CE
2.4
Common emitter
20
Ta = 25°C
2.0
10
5
1.6
2
1.2
1
0.8
0.5
0.4
IB = 0.2 mA
0
0
0
1
2
3
4
5
6
7
Collector-emitter voltage V
CE
(V)
V
CE
– I
C
1.0
IB = 1 mA 5 10
20 30
Common emitter
Ta = 100°C
0.8
0.6
50
0.4
0.2
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current I
C
(A)
2SC3673
V
CE
– I
C
1.2
Common emitter
Ta = 25°C
1.0
IB = 1 mA 5 10
20 30
0.8
0.6
0.4
50
0.2
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current I
C
(A)
V
CE
– I
C
1.0
Common emitter
IB = 1 mA 5 10 20
Ta =
−
55°C
0.8
30
0.6
0.4
50
0.2
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current I
C
(A)
5000
3000
1000
500
300
Ta = 100°C
25
−
55
h
FE
– I
C
Common emitter
VCE = 1 V
100
50
30
0.01 0.03
0.1
0.3
1
3
Collector current I
C
(A)
V
CE (sat)
– I
C
5
Common emitter
3
IC/IB = 300
1
0.5
0.3
Ta = 100°C
0.1
25
−
55
0.05
0.03
0.01 0.03
0.1
0.3
1
3
Collector current I
C
(A)
3
2004-07-26
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