C3405 Просмотр технического описания (PDF) - TY Semiconductor

Номер в каталоге

Компоненты Описание

производитель

C3405

NPN Silicon Triple Diffused Transistor

TY Semiconductor 

SMD Type

Transistors

Product specification

2SC3405

Features

Excellent Switching Times

tr=1.0ìs (Max.) tf=1.0ìs (Max.) at IC=0.3A

High colletor Breakdown Voltage: VCEO=800V

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

Unit: mm

0.80+0.1

-0.1

0.127

max

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Base Current

Total Power dissipation Ta = 25

TC = 25

Junction temperature

Storage temperature

2.3

4.60+0.15

-0.15

0.60+0.1

-0.1

Symbol

Rating

Unit

VCBO

900

V

VCEO

800

V

VEBO

8

V

IC

0.8

A

Icp

1.5

A

IB

0.2

A

1

W

PC

20

W

Tj

150

Tstg

-55 to +150

1 Base

2 Collector

3 Emitter

Electrical Characteristics Ta = 25

Parameter

collector cutoff current

emitter cutoff current

Emitter-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

DC current Gain

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

Symbol

ICBO

IEBO

V(BR)EBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

Testconditons

VCB=800V,IE=0

VEB=8V,IC=0

IE=1mA,IC=0

IC=10mA,IB=0

VCE=5V,IC=1mA

VCE=5V,IC=0.3A

IC=0.3A,IB=0.06A

IC=0.3A,IB=0.06A

Min Typ Max Unit

100 ìA

1 mA

900

V

800

V

6

10

0.5 V

1.2 V

Switching time turn-0n time

tr

1 ìs

Switching storage time

tstg

4.0 ìs

Switching fall time

tf

1 ìs

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

1 of 1

Share Link: