2SC3466 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC3466 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat Base-emitter saturation voltage
IC=4A ;IB=0.8A
ICBO
Collector cut-off current
VCB=650V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=1A ; VCE=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=4A;RL=50Ω
IB1=0.8A; IB2=-1.6A
VCC=200V
hFE-1 Classifications
K
L
M
10-20
15-30
20-40
Product Specification
2SC3466
MIN TYP. MAX UNIT
650
V
1200
V
7
V
3.0
V
1.5
V
100
μA
100
μA
10
40
6
120
pF
5
MHz
1.0
μs
4.0
μs
0.7
μs
2
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