SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3306
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ,IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ,IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ,IC=0
VCEsat
VBEsat
ICBO
IEBO
Collector-emitter saturation voltage IC=5A; IB=0.5A
Base-emitter saturation voltage
IC=5A; IB=0.5A
Collector cut-off current
VCB=400V; IE=0
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=5A ; VCE=5V
Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
VCC=200V; IC=5.0A
IB1=-IB2=0.5A;RL=40 <
MIN TYP. MAX UNIT
400
V
500
V
7
V
1.5
V
2.0
V
100
µA
1.0
mA
10
1.0
µs
2.5
µs
1.0
µs
2