2SC3317 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC3317 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A
VBEsat Base-emitter saturation voltage
IC=2A; IB=0.4A
ICBO
Collector cut-off current
VCB=500V ;IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=2A ; VCE=5V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=2.5AIB1=0.5A;
IB2=-1A;RL=60Ω
Pw=20μs ;Duty≤2%
Product Specification
2SC3317
MIN TYP. MAX UNIT
400
V
400
500
V
7
V
1.0
V
1.5
V
1
mA
1
mA
10
0.50 μs
1.50 μs
0.15 μs
2
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