2SC3356L-C-AE3-R Просмотр технического описания (PDF) - Unisonic Technologies

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2SC3356L-C-AE3-R

NPN SILICON TRANSISTOR

Unisonic Technologies 

UNISONIC TECHNOLOGIES CO., LTD

2SC3356

NPN SILICON TRANSISTOR

„ TYPICAL CHARACTERISTICS(Cont.)

Noise Figure vs. Collector Current

7

VCE=10V

f=1.0GHz

6

5

4

3

2

1

0

0.5 1

5 10

Collector Current, IC (mA)

50 70

Noise Figure, Forward Insertion Gain

vs. Collector to Emitter Voltage

5

f=1.0GHz

IC=20mA

4

|S21θ|2

3

2

NF

1

0

0

2

4

6

8

10

Collector to Emitter Voltage, VCE (V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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Copyright © 2009 Unisonic Technologies Co., Ltd

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