2SC3087 Просмотр технического описания (PDF) - SavantIC Semiconductor

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2SC3087

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3087

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=4mA ; RBE=A

V(BR)CBO Collector-base breakdown voltage

IC=1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.6 A

VBE(sat) Base-emitter saturation voltage

IC=3A; IB=0.6 A

ICBO

Collector cut-off current

VCB=500V ;IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=0.6A ; VCE=5V

hFE-2

DC current gain

IC=3A ; VCE=5V

fT

Transition frequency

IC=0.6A ; VCE=10V

COB

Output capacitance

f=10MHz ; VCB=10V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

VCC=200V; IC=4A

IB1=0.8A;IB2=-0.8A;

RL=50F

hFE-1 classifications

L

M

N

15-30

20-40

30-50

MIN TYP. MAX UNIT

500

V

800

V

7

V

1.0

V

1.5

V

10

µA

10

µA

15

50

8

18

MHz

80

pF

1.0

µs

3.0

µs

1.0

µs

2

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