2SC3159 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC3159 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3159
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
400
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
500
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A
1.0
V
VBEsat Base-emitter saturation voltage
IC=6A; IB=1.2A
1.2
V
ICBO
Collector cut-off current
VCB=400V ;IE=0
10
μA
IEBO
Emitter cut-off current
固IN电C半H导AN体GE SEMICONDUCTOR hFE-1
DC current gain
hFE-2
DC current gain
VEB=5V; IC=0
IC=1A ; VCE=5V
IC=6A ; VCE=5V
10
15
80
10
μA
2
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