C3110 Просмотр технического описания (PDF) - Inchange Semiconductor

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C3110

Silicon NPN RF Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN RF Transistor

isc RF Product Specification

2SC3110

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCB= 10V; IE= 0

VEB= 2V; IC= 0

0.1 μA

1

μA

hFE

DC Current Gain

IC= 10mA ; VCE= 10V

40

fT

Current-Gain—Bandwidth Product

IE= -10mA ; VCE= 10V

4.5

GHz

COB

Output Capacitance

︱S21e︱2 Insertion Power Gain

GUM Power Gain

IE= 0; VCB= 10V; f= 1.0MHz

1.2 pF

9

12

dB

IC= 20mA; VCE= 10V; f= 0.8GHz

12 14

dB

NF

Noise Figure

IC= 5mA; VCE= 10V; f= 0.8GHz

1.3 2.5 dB

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