2SC3083 Просмотр технического описания (PDF) - SANYO -> Panasonic

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Компоненты Описание

производитель

2SC3083

NPN Triple Diffused Planar Silicon Transistor

SANYO -> Panasonic 

Parameter

Gain-Bandwidth Product

Output Capacitance

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Collector-to-Emitter Sustain Voltage

Collector-to-Emitter Sustain Voltage

Turn-ON Time

Storage Time

Fall Time

Switching Time Test Circuit

2SC3083

Symbol

Conditions

fT

Cob

V(BR)CBO

V(BR)CEO

V(BR)EBO

VCEO(sus)

VCEX(sus)1

VCEX(sus)2

ton

tstg

tf

VCE=10V, IC=0.4A

VCB=10V, f=1MHz

IC=1mA, IE=0

IC=5mA, RBE=∞

IE=1mA, IC=0

IC=6A, IB=1.2A, L=50µH

IC=6A, IB1=1.2A, L=200µH, IB2=–1.2A, clamped

IC=0.75A, IB1=0.15A, L=200µH, IB2=–0.15A,

clamped

IC=3A, IB1=0.6A, IB2=–0.6A, RL=66.6Ω,

VCC=200V

IC=3A, IB1=0.6A, IB2=–0.6A, RL=66.6Ω,

VCC=200V

IC=3A, IB1=0.6A, IB2=–0.6A, RL=66.6Ω,

VCC=200V

Ratings

min

typ

max

20

40

500

400

7

400

400

450

Unit

MHz

pF

V

V

V

V

V

V

1.0 µs

2.5 µs

1.0 µs

No.947–2/4

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