2SC3074 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SC3074 Datasheet PDF : 5 Pages
| |||
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074
2SC3074
High Current Switching Applications
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)
• High speed switching time: tstg = 1.0 μs (typ.)
• Complementary to 2SA1244
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
VCEO
50
V
VEBO
5
V
IC
5
A
IB
1
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1.0
W
20
Junction temperature
Storage temperature range
Tj
150
°C
JEDEC
―
Tstg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-08-27
Share Link: 