C2883 Просмотр технического описания (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

Номер в каталоге

Компоненты Описание

производитель

C2883

TRANSISTOR (NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SC2883

TRANSISTOR (NPN)

FEATURES

Low voltage

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

VEBO

IC

PC

TJ

Tstg

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

30

30

5

1.5

0.5

150

-55-150

Units

V

V

V

A

W

℃

℃

SOT-89

1. BASE

2. COLLECTOR 1

3. EMITTER

2

3

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol Test conditions

V(BR)CBO IC=1mA,IE=0

V(BR)CEO IC=10mA,IB=0

V(BR)EBO IE=1mA,IC=0

ICBO

VCB=30V,IE=0

IEBO

VEB=5V,IC=0

hFE

VCE=2V,IC=0.5A

VCE(sat) IC=1.5A,IB=30mA

VBE

VCE=2V,IC=0.5A

fT

VCE=2V,IC=500mA

Cob

VCB=10V,IE=0,f=1MHz

MIN TYP MAX UNIT

30

V

30

V

5

V

0.1

μA

0.1

μA

100

320

2

V

1

V

120

MHz

40

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

O

100-200

GO

Y

160-320

GY

１　

JinYu

semiconductor

www.htsemi.com

Share Link: