2SC2715 Просмотр технического описания (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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производитель

2SC2715

TRANSISTOR (NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SC2715

TRANSISTOR (NPN)

FEATURES

z High Power Gain

z Recommended for FM IF,OSC Stage and AM CONV. IF Stage.

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

35

30

4

50

350

150

-55-150

Units

V

V

V

mA

mW

℃

℃

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Power Gain

Symbol

Test conditions

V(BR)CBO IC=10μA, IE=0

V(BR)CEO IC=1mA, IB=0

V(BR)EBO IE=10μA, IC=0

ICBO

VCB=35V, IE=0

IEBO

VEB=4V, IC=0

hFE(1) VCE=12V, IC=2mA

VCE(sat) IC=10mA, IB=1mA

VBE(sat) IC=10mA, IB=1mA

fT

VCE=10V, IC=1mA

Gpe VCE=6V, IC=1mA, f=10.7MHZ

MIN TYP MAX UNIT

35

V

30

V

4

V

0.1 μA

0.1 μA

40

240

0.4 V

1

V

100

400 MHz

27

33

dB

CLASSIFICATION OF hFE(1)

Rank

Range

Marking

R

40-80

RR1

O

70-140

RO1

１　

JinYu

semiconductor

www.htsemi.com

Y

120-240

RY1

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