2SC2838 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC2838 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2838
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
150
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
150
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
5
V
VCEsat Collector-emitter saturation voltage IC=5 A; IB=0.5 A
ICBO
Collector cut-off current
VCB=140V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.8
V
50
μA
50
μA
hFE
DC current gain
IC=3A ; VCE=4V
60
固IN电C半H导AN体GE SEMICONDUCTOR fT
Transition frequency
IC=1A ; VCE=10V
70
MHz
2
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