C2714 Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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производитель

C2714

Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

Production specification

Silicon Epitaxial Planar Transistor

2SC2714

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP

Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0

40

Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0

30

Emitter-base breakdown voltage

V(BR)EBO IE=100μA,IC=0

4

Collector cut-off current

ICBO

VCB=18V,IE=0

Emitter cut-off current

IEBO

VEB=4V,IC=0

DC current gain

hFE

VCE=6V,IC=1mA

40

Collector-emitter saturation voltage VCE(sat)

IC=10mA, IB=1mA

Transition frequency

fT

VCE=6V, IC= 1mA

550

Output capacitance

Cob

VCB=6V, IE=0,f=1MHz

0.7

Noise Figure

NF

VCE=6V,IE=-1mA,f=100MHz

2.5

MAX

0.5

0.5

200

0.3

5

UNIT

V

V

V

μA

μA

V

MHz

pF

dB

CLASSIFICATION OF hFE(1)

Rank

Range

Marking

R

40-80

QR

O

70-140

QO

Y

100-200

QY

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

C098

Rev.A

www.gmicroelec.com

2

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