2SC2712G-G-AE3-R Просмотр технического описания (PDF) - Unisonic Technologies

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2SC2712G-G-AE3-R

NPN SILICON TRANSISTOR

Unisonic Technologies 

2SC2712

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise stated)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

150

mA

Base Current

IB

30

mA

Collector Power Dissipation

PC

150

mW

Junction Temperature

TJ

+125

°С

Storage Temperature

TSTG

-55 ~ +125

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise stated)

PARAMETER

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Transistor Frequency

Collector Output Capacitance

Noise Figure

SYMBOL

ICBO

IEBO

hFE

VCE(SAT)

fT

Cob

NF

TEST CONDITIONS

VCB=60V, IE=0

VEB=5V, IC=0

VCE=6V, IC=2mA

IC=100mA, IB=10mA

VCE=10V, IC=1mA

VCB=10V, IE=0, f=1MHz

VCE=6V, IC=0.1mA

f=1kHz, Rg=10KΩ

„ CLASSIFICATION OF hFE

RANK

RANGE

Y

120~240

G

200~400

MIN TYP MAX UNIT

0.1

μA

0.1

μA

70

700

0.1 0.25

V

80

MHz

2.0

3.5

pF

1.0

10

dB

L

350~700

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R206-029.E

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