C2716 Просмотр технического описания (PDF) - Toshiba

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Компоненты Описание

производитель

C2716

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Toshiba 

y Parameter (typ.) (common emitter VCE = 6 V, IE = −1 mA, f = 1 MHz)

Characteristics

Input conductance

Input capacitance

Output conductance

Output capacitance

Forward transfer admittance

Phase angle of forward transfer

admittance

Reverse transfer admittance

Phase angle of reverse transfer

admittance

Symbol

gie

Cie

goe

Coe

⎪yfe⎪

θfe

⎪yre⎪

θre

2SC2716-R

0.5

50

4

3.7

36

−1.6

14

−90

2SC2716-O

0.35

48

5

3.4

36

−1.6

14

−90

2SC2716

2SC2716-Y

Unit

0.22

mS

46

pF

6.5

μS

3.2

pF

36

mS

−1.6

°

14

μS

−90

°

Marking

2

2007-11-01

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