2SC2336P Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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производитель
2SC2336P Datasheet PDF : 5 Pages
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JMnic
Silicon NPN Power Transistors
Product Specification
2SC2336 2SC2336A 2SC2336B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA
VBEsat Base-emitter saturation voltage
IC=0.5A ;IB=50mA
ICBO
Collector cut-off current
VCB=150V; IE=0
IEBO
hFE-1
hFE-2
Emitter cut-off current
DC current gain
DC current gain
VEB=3V; IC=0
IC=5mA ; VCE=5V
IC=150mA ; VCE=5V
Cob
Output capacitance
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IC=100mA ; VCE=10V
MIN TYP. MAX UNIT
1.0
V
1.5
V
1
μA
1
μA
30
60
320
30
pF
95
MHz
hFE-2 Classifications
R
Q
P
60-120 100-200 160-320
2
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