2SC2336P Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC2336P Datasheet PDF : 5 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2336 2SC2336A 2SC2336B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA
1.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=0.5A ;IB=50mA
VCB=150V; IE=0
VEB=3V; IC=0
1.5
V
1
μA
1
μA
hFE-1
DC current gain
IC=5mA ; VCE=5V
30
hFE-2
DC current gain
IC=150mA ; VCE=5V
60
320
Cob
Output capacitance
IE=0 ; VCB=10V,f=1MHz
30
pF
fT
Transition frequency
IC=100mA ; VCE=10V
95
MHz
固IN电C半H导AN体GE SEMICONDUCTOR hFE-2 Classifications
R
Q
P
60-120 100-200 160-320
2
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